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inchange semiconductor isc rf product specification isc website www.iscsemi.cn 1 isc silicon npn rf transistor 2SC5191 description low voltage operation ,low phase distortion low noise nf = 1.5 db typ. @v ce = 3 v, i c = 7 ma, f = 2 ghz nf = 1.7 db typ. @v ce = 1 v, i c = 3 ma, f = 2 ghz large absolute maximum collector current i c = 100 ma applications designed for use in low-noise and small signal amplifiers from vhf ~ uhf band. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 9 v v ceo collector-emitter voltage 6 v v ebo emitter-base voltage 2 v i c collector current-continuous 100 ma p c collector power dissipation @t c =25 0.2 w t j junction temperature 150 t stg storage temperature range -65~150
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 2 isc silicon npn rf transistor 2SC5191 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit i cbo collector cutoff current v cb = 5v; i e = 0 0.1 a i ebo emitter cutoff current v eb = 1v; i c = 0 0.1 a h fe dc current gain i c = 3ma ; v ce = 1v 80 160 f t(1) current-gain?bandwidth product i c = 3ma ; v ce = 1v;f= 2.0ghz 4 4.5 ghz f t(2) current-gain?bandwidth product i c = 20ma ; v ce = 3v;f= 2.0ghz 8.5 ghz c re feed-back capacitance i e = 0 ; v cb = 1v;f= 1.0mhz 0.75 0.85 pf s 21e 2 (1) insertion power gain i c = 3ma ; v ce = 1v;f= 2.0ghz 2.5 3.5 db s 21e 2 (2) insertion power gain i c = 20ma ; v ce = 3v;f= 2.0ghz 6.5 db nf (1) noise figure i c = 3ma ; v ce = 1v;f= 2.0ghz 1.7 2.5 db nf (2) noise figure i c = 7ma ; v ce = 3v;f= 2.0ghz 1.5 db ? h fe classification rank fb marking t88 h fe 80-160
inchange semiconductor isc rf product specification 3 isc website www.iscsemi.cn isc silicon npn rf transistor 2SC5191
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 4 isc silicon npn rf transistor 2SC5191
inchange semiconductor isc rf product specification 5 isc website www.iscsemi.cn isc silicon npn rf transistor 2SC5191 s-parameter v ce = 1 v, i c = 1 ma, z o = 50 freque . s 11 s 21 s 12 s 22 (mhz) mag ang mag ang mag ang mag ang 100 0.969 -17.1 3.342 165. 9 0.058 80.2 0.990 -9.6 200 0.923 -34.8 3.220 152. 2 0.099 71.6 0.948 -17.9 300 0.868 -51.0 3.032 139. 4 0.141 61.0 0.877 -26.0 400 0.831 -65.4 2.785 128. 8 0.167 49.6 0.821 -33.3 500 0.762 -79.3 2.592 118. 8 0.186 45.7 0.766 -38.6 600 0.715 -91.0 2.355 109. 3 0.202 37.4 0.710 -42.5 700 0.678 -103.8 2.190 100. 6 0.210 34.9 0.664 -46.5 800 0.645 -113.9 2.020 94. 1 0.219 30.8 0.629 -50.1 900 0.617 -124.9 1.849 86. 6 0.216 26.8 0.599 -54.8 1000 0.600 -134.1 1.759 80. 4 0.226 23.6 0.573 -56.2 1100 0.586 -141.8 1.638 75. 2 0.220 25.1 0.546 -60.1 1200 0.559 -150.3 1.530 70. 0 0.223 23.0 0.514 -60.4 1300 0.556 -158.1 1.459 65. 1 0.213 24.1 0.513 -64.9 1400 0.551 -166.4 1.379 61. 2 0.216 26.2 0.495 -66.4 1500 0.532 -171.2 1.288 56. 1 0.207 24.3 0.481 -69.4 1600 0.553 -177.8 1.237 53. 3 0.209 25.5 0.477 -72.0 1700 0.552 176.8 1.206 50.2 0.214 26.9 0.468 -75.2 1800 0.548 170.0 1.145 46.7 0.204 29.2 0.470 -78.4 1900 0.537 164.3 1.058 43.5 0.199 30.8 0.470 -80.9 2000 0.552 160.5 1.051 41.2 0.209 31.8 0.442 -84.6
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 6 isc silicon npn rf transistor 2SC5191 v ce = 1 v, i c = 3 ma, z o = 50 freque . s 11 s 21 s 12 s 22 (mhz) mag ang mag ang mag ang mag ang 100 0.878 -27.3 8.524 158. 6 0.042 70.2 0.931 -17.4 200 0.795 -52.6 7.536 140. 5 0.086 63.9 0.840 -32.4 300 0.692 -73.3 6.465 125. 8 0.113 52.7 0.708 -43.3 400 0.612 -90.3 5.488 115. 3 0.123 47.8 0.602 -51.1 500 0.553 -105.9 4.763 106. 3 0.143 44.7 0.535 -56.7 600 0.511 -117.9 4.142 98. 5 0.153 43.8 0.479 -61.1 700 0.477 -130.1 3.673 92. 1 0.156 42.1 0.422 -64.5 800 0.449 -139.3 3.273 86. 6 0.164 40.8 0.386 -67.9 900 0.443 -149.3 2.951 81. 4 0.166 42.2 0.362 -70.5 1000 0.427 -158.0 2.727 76. 5 0.185 41.3 0.337 -73.2 1100 0.430 -165.7 2.524 72. 4 0.183 40.8 0.318 -75.0 1200 0.414 -171.7 2.338 68. 5 0.196 42.5 0.287 -79.0 1300 0.409 -178.9 2.194 64. 4 0.205 42.9 0.295 -81.7 1400 0.421 177.0 2.072 61.3 0.211 42.6 0.277 -83.9 1500 0.397 170.0 1.924 57.3 0.221 41.8 0.264 -86.1 1600 0.430 165.1 1.823 55.2 0.228 41.2 0.258 -87.3 1700 0.415 161.5 1.753 52.2 0.242 43.4 0.257 -94.1 1800 0.446 155.0 1.641 48.9 0.252 44.0 0.242 -96.0 1900 0.414 150.3 1.561 46.7 0.261 42.6 0.239 -95.3 2000 0.432 147.2 1.523 44.6 0.268 42.8 0.227 -103.4
inchange semiconductor isc rf product specification 7 isc website www.iscsemi.cn isc silicon npn rf transistor 2SC5191 v ce = 1 v, i c = 5 ma, z o = 50 freque . s 11 s 21 s 12 s 22 (mhz) mag ang mag ang mag ang mag ang 100 0.828 -34.9 12.029 153. 2 0.047 72.5 0.896 -23.8 200 0.698 -64.4 9.922 133. 0 0.076 59.6 0.750 -41.2 300 0.586 -86.5 8.024 118. 3 0.100 52.5 0.602 -53.1 400 0.513 -103.4 6.568 108. 6 0.111 49.5 0.488 -61.1 500 0.461 -118.7 5.561 100. 5 0.121 48.7 0.428 -66.7 600 0.423 -132.0 4.754 93. 8 0.129 46.9 0.363 -71.2 700 0.409 -143.3 4.178 88. 3 0.147 49.8 0.330 -74.3 800 0.379 -152.0 3.699 83. 5 0.156 47.9 0.299 -77.4 900 0.396 -160.6 3.317 78. 8 0.162 47.2 0.275 -82.9 1000 0.380 -169.2 3.040 74. 6 0.178 48.4 0.260 -84.9 1100 0.386 -175.8 2.810 70. 8 0.185 49.2 0.237 -87.8 1200 0.379 177.9 2.596 67.4 0.200 48.0 0.222 -90.4 1300 0.374 172.3 2.412 63.9 0.208 48.2 0.224 -95.8 1400 0.385 167.2 2.269 60.9 0.216 47.4 0.203 -97.8 1500 0.366 162.1 2.136 57.4 0.233 46.8 0.197 -101.8 1600 0.394 157.6 1.994 55.6 0.247 47.5 0.189 -105.4 1700 0.387 154.4 1.940 52.4 0.253 48.2 0.200 -107.6 1800 0.401 149.9 1.822 50.2 0.265 46.1 0.186 -112.3 1900 0.394 143.8 1.705 47.1 0.276 47.1 0.181 -108.8 2000 0.413 142.2 1.661 45.5 0.294 46.2 0.183 -122.0
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 8 isc silicon npn rf transistor 2SC5191 v ce = 1 v, i c = 7 ma, z o = 50 freque . s 11 s 21 s 12 s 22 (mhz) mag ang mag ang mag ang mag ang 100 0.765 -41.7 14.938 148. 5 0.047 67.6 0.856 -29.5 200 0.621 -74.7 11.624 127. 4 0.069 57.3 0.675 -49.1 300 0.514 -97.4 8.988 113. 0 0.089 52.6 0.516 -61.4 400 0.450 -114.0 7.200 104. 2 0.105 48.1 0.417 -69.3 500 0.417 -129.8 6.002 96. 8 0.119 51.6 0.358 -75.2 600 0.382 -141.2 5.090 90. 7 0.132 50.0 0.312 -77.7 700 0.370 -153.0 4.437 85. 7 0.138 54.3 0.274 -81.5 800 0.352 -161.1 3.924 81. 5 0.152 52.4 0.248 -88.8 900 0.368 -168.9 3.502 77. 3 0.158 53.2 0.231 -92.2 1000 0.358 -177.0 3.198 73. 1 0.176 53.7 0.211 -93.2 1100 0.360 177.8 2.961 70.1 0.191 52.3 0.191 -100.3 1200 0.360 171.7 2.726 66.8 0.206 53.1 0.185 -101.6 1300 0.365 165.9 2.534 63.2 0.217 52.1 0.187 -105.6 1400 0.369 160.9 2.380 60.3 0.235 51.6 0.171 -111.0 1500 0.351 155.9 2.225 57.4 0.240 50.3 0.165 -119.0 1600 0.382 153.0 2.099 55.6 0.258 50.4 0.157 -119.3 1700 0.374 150.9 2.035 52.8 0.267 50.3 0.166 -125.9 1800 0.395 145.3 1.909 50.1 0.276 47.7 0.166 -132.7 1900 0.389 140.7 1.796 48.2 0.279 48.1 0.156 -130.1 2000 0.394 137.7 1.732 46.0 0.307 45.0 0.158 -138.8
inchange semiconductor isc rf product specification 9 isc website www.iscsemi.cn isc silicon npn rf transistor 2SC5191 v ce = 1 v, i c = 10 ma, z o = 50 freque . s 11 s 21 s 12 s 22 (mhz) mag ang mag ang mag ang mag ang 100 0.709 -49.2 17.593 143. 9 0.046 65.1 0.813 -35.5 200 0.559 -84.3 12.812 122. 2 0.062 62.1 0.599 -55.4 300 0.453 -107.2 9.641 108. 9 0.078 52.2 0.458 -68.8 400 0.402 -124.4 7.603 100. 7 0.099 55.9 0.354 -78.2 500 0.380 -139.0 6.276 93. 8 0.108 52.3 0.308 -84.6 600 0.354 -149.7 5.297 88. 3 0.122 55.0 0.254 -88.0 700 0.346 -160.7 4.604 83. 8 0.140 56.0 0.232 -93.3 800 0.334 -168.4 4.044 79. 8 0.145 57.5 0.208 -98.3 900 0.356 -175.4 3.614 75. 9 0.163 55.1 0.202 -102.5 1000 0.346 176.7 3.290 72.1 0.173 54.1 0.177 -107.7 1100 0.353 171.9 3.049 69.0 0.191 53.3 0.167 -110.5 1200 0.360 166.4 2.806 65.7 0.201 54.7 0.157 -116.5 1300 0.351 161.2 2.610 62.6 0.218 53.0 0.161 -120.6 1400 0.361 156.0 2.434 60.1 0.240 53.4 0.150 -128.5 1500 0.351 150.0 2.296 57.6 0.255 50.8 0.140 -131.4 1600 0.378 149.4 2.154 55.4 0.269 52.3 0.160 -137.6 1700 0.356 146.5 2.090 52.4 0.279 50.8 0.166 -136.0 1800 0.386 141.6 1.942 50.7 0.295 49.8 0.139 -138.1 1900 0.379 139.0 1.844 47.8 0.297 48.5 0.143 -138.2 2000 0.404 135.6 1.787 45.7 0.309 47.5 0.148 -148.3
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 10 isc silicon npn rf transistor 2SC5191 v ce = 3 v, i c = 1 ma, z o = 50 freque . s 11 s 21 s 12 s 22 (mhz) mag ang mag ang mag ang mag ang 100 0.963 -15.6 3.352 167. 4 0.039 69.0 0.987 -7.2 200 0.935 -31.4 3.268 155. 2 0.077 70.7 0.966 -14.3 300 0.889 -45.5 3.121 143. 4 0.110 63.1 0.912 -20.7 400 0.846 -59.2 2.893 133. 6 0.133 52.8 0.872 -26.2 500 0.791 -71.9 2.735 124. 1 0.152 50.6 0.824 -30.9 600 0.734 -83.7 2.517 115. 0 0.163 43.2 0.782 -34.5 700 0.694 -96.2 2.371 106. 7 0.156 39.1 0.737 -38.5 800 0.668 -105.7 2.182 99. 9 0.184 35.4 0.689 -40.8 900 0.633 -117.2 2.022 92. 6 0.183 33.0 0.660 -45.4 1000 0.611 -127.2 1.927 86. 7 0.181 32.4 0.648 -46.8 1100 0.597 -135.2 1.796 81. 0 0.183 30.1 0.610 -48.9 1200 0.564 -143.3 1.681 76. 1 0.171 29.2 0.590 -50.7 1300 0.544 -151.2 1.601 71. 1 0.180 29.4 0.587 -53.7 1400 0.543 -159.7 1.510 66. 8 0.169 29.2 0.581 -55.6 1500 0.531 -165.5 1.410 61. 6 0.173 30.4 0.565 -58.4 1600 0.542 -173.1 1.336 58. 9 0.172 32.6 0.552 -60.9 1700 0.535 -178.3 1.314 56. 0 0.178 34.3 0.541 -63.7 1800 0.529 174.4 1.244 52.3 0.161 36.6 0.545 -66.0 1900 0.515 169.5 1.163 48.4 0.171 38.1 0.548 -68.1 2000 0.531 164.3 1.136 46.0 0.183 40.1 0.530 -71.4
inchange semiconductor isc rf product specification 11 isc website www.iscsemi.cn isc silicon npn rf transistor 2SC5191 v ce = 3 v, i c = 3 ma, z o = 50 freque . s 11 s 21 s 12 s 22 (mhz) mag ang mag ang mag ang mag ang 100 0.896 -23.6 8.711 160. 8 0.040 74.9 0.949 -13.8 200 0.812 -45.2 7.884 144. 2 0.071 66.3 0.877 -24.9 300 0.715 -63.9 6.914 130. 2 0.092 59.1 0.757 -34.5 400 0.636 -79.4 5.959 119. 9 0.103 51.9 0.673 -40.1 500 0.566 -92.8 5.241 111. 0 0.116 48.4 0.609 -44.6 600 0.516 -104.7 4.591 103. 1 0.124 45.4 0.546 -47.4 700 0.464 -117.5 4.116 96. 5 0.131 42.4 0.499 -50.0 800 0.428 -127.4 3.676 91. 1 0.149 44.5 0.465 -52.8 900 0.427 -138.6 3.330 85. 4 0.144 44.9 0.433 -55.1 1000 0.389 -147.0 3.073 81. 1 0.155 45.7 0.420 -55.8 1100 0.384 -154.9 2.843 76. 8 0.162 45.7 0.389 -57.5 1200 0.380 -162.2 2.638 72. 7 0.168 46.5 0.363 -57.4 1300 0.364 -170.0 2.470 68. 8 0.176 47.0 0.367 -60.1 1400 0.378 -177.8 2.325 65. 7 0.191 49.7 0.360 -62.3 1500 0.361 178.3 2.162 61.6 0.190 46.6 0.333 -64.2 1600 0.382 172.1 2.045 59.6 0.203 47.2 0.320 -65.9 1700 0.371 169.0 1.973 56.6 0.210 49.3 0.328 -70.4 1800 0.386 162.2 1.854 53.8 0.217 48.5 0.311 -72.5 1900 0.373 156.8 1.749 50.6 0.230 50.1 0.321 -73.1 2000 0.387 153.1 1.703 48.6 0.236 50.1 0.299 -75.8
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 12 isc silicon npn rf transistor 2SC5191 v ce = 3 v, i c = 5 ma, z o = 50 freque . s 11 s 21 s 12 s 22 (mhz) mag ang mag ang mag ang mag ang 100 0.847 -29.5 12.405 156. 1 0.040 66.7 0.922 -18.5 200 0.718 -54.0 10.551 137. 2 0.064 65.1 0.805 -31.9 300 0.607 -74.5 8.790 122. 8 0.083 59.2 0.662 -41.3 400 0.525 -89.4 7.304 113. 1 0.097 53.0 0.566 -47.1 500 0.454 -103.9 6.251 104. 8 0.102 51.9 0.494 -50.6 600 0.402 -115.9 5.383 97. 9 0.115 51.6 0.445 -52.2 700 0.379 -127.6 4.744 92. 2 0.124 53.4 0.401 -55.5 800 0.349 -137.8 4.216 87. 5 0.127 51.1 0.377 -56.2 900 0.347 -148.2 3.784 82. 7 0.145 52.8 0.348 -59.2 1000 0.318 -155.9 3.477 78. 6 0.157 53.3 0.326 -59.1 1100 0.323 -163.8 3.202 75. 0 0.162 52.3 0.293 -63.5 1200 0.320 -171.7 2.963 71. 4 0.175 52.8 0.288 -63.2 1300 0.313 -177.4 2.751 67. 9 0.191 53.5 0.294 -66.9 1400 0.320 175.0 2.589 65.1 0.192 50.9 0.281 -68.0 1500 0.305 169.8 2.421 61.2 0.195 51.4 0.263 -68.7 1600 0.327 163.6 2.276 59.4 0.210 53.1 0.245 -71.4 1700 0.308 162.5 2.203 56.8 0.226 51.8 0.248 -75.4 1800 0.341 156.8 2.069 53.9 0.230 51.2 0.236 -76.9 1900 0.327 148.3 1.951 51.1 0.239 51.3 0.241 -78.1 2000 0.333 147.6 1.891 49.4 0.254 50.4 0.226 -83.2
inchange semiconductor isc rf product specification 13 isc website www.iscsemi.cn isc silicon npn rf transistor 2SC5191 v ce = 3 v, i c = 7 ma, z o = 50 freque . s 11 s 21 s 12 s 22 (mhz) mag ang mag ang mag ang mag ang 100 0.780 -33.5 15.604 151. 8 0.034 75.0 0.889 -22.4 200 0.639 -61.9 12.605 131. 6 0.059 62.9 0.738 -37.1 300 0.520 -82.6 10.059 117. 5 0.080 59.3 0.580 -46.6 400 0.442 -97.6 8.162 108. 4 0.085 56.6 0.494 -52.5 500 0.382 -112.6 6.855 100. 9 0.098 55.7 0.427 -54.4 600 0.346 -124.7 5.848 94. 6 0.108 56.5 0.373 -55.5 700 0.318 -136.6 5.125 89. 5 0.118 57.5 0.344 -58.1 800 0.295 -144.5 4.525 85. 3 0.131 57.5 0.314 -60.2 900 0.297 -156.6 4.059 80. 8 0.134 55.0 0.290 -63.1 1000 0.282 -164.9 3.730 77. 0 0.153 56.6 0.284 -62.8 1100 0.285 -170.0 3.414 73. 7 0.164 58.3 0.269 -64.7 1200 0.279 -177.0 3.152 70. 5 0.178 56.0 0.247 -67.7 1300 0.269 176.0 2.945 67.1 0.188 55.8 0.234 -70.3 1400 0.295 169.7 2.762 64.6 0.204 57.0 0.224 -70.8 1500 0.278 163.5 2.572 61.2 0.213 54.7 0.222 -73.1 1600 0.297 161.3 2.427 59.6 0.225 53.1 0.225 -74.4 1700 0.281 156.8 2.331 56.8 0.240 53.9 0.212 -82.0 1800 0.318 151.6 2.194 54. 5 0.247 52.9 0.198 82.6 1900 0.293 144.1 2.073 51.3 0.263 52.6 0.210 -82.6 2000 0.307 144.2 2.009 49.7 0.266 51.3 0.183 -89.8
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 14 isc silicon npn rf transistor 2SC5191 v ce = 3 v, i c = 10 ma, z o = 50 freque . s 11 s 21 s 12 s 22 (mhz) mag ang mag ang mag ang mag ang 100 0.731 -39.7 18.468 148. 0 0.036 64.3 0.857 -27.2 200 0.570 -68.3 14.160 127. 2 0.055 62.0 0.676 -41.8 300 0.453 -88.8 10.931 113. 5 0.070 57.7 0.530 -50.0 400 0.381 -104.3 8.738 105. 0 0.085 59.4 0.432 -56.4 500 0.334 -119.4 7.284 98. 1 0.093 58.9 0.380 -57.7 600 0.297 -131.4 6.170 92. 4 0.103 60.7 0.332 -60.1 700 0.285 -145.7 5.377 87. 6 0.121 57.6 0.297 -61.5 800 0.254 -151.0 4.738 83. 8 0.133 61.4 0.278 -62.8 900 0.274 -161.8 4.232 79. 8 0.142 62.0 0.248 -65.8 1000 0.250 -169.5 3.882 76. 2 0.158 60.6 0.237 -65.0 1100 0.263 -176.4 3.572 72. 8 0.164 58.0 0.228 -68.8 1200 0.260 176.4 3.289 70.0 0.182 58.9 0.198 -70.3 1300 0.251 170.1 3.069 66.6 0.192 56.8 0.211 -71.3 1400 0.259 166.9 2.885 64.3 0.201 56.1 0.202 -75.4 1500 0.253 161.3 2.685 60.9 0.214 54.6 0.186 -80.0 1600 0.283 155.7 2.519 59.4 0.230 55.9 0.180 -80.6 1700 0.270 152.5 2.427 56.9 0.243 56.3 0.171 -81.9 1800 0.310 146.5 2.278 54.8 0.256 52.8 0.175 -86.6 1900 0.281 141.1 2.145 51.8 0.268 54.0 0.169 -86.4 2000 0.306 139.5 2.088 50.1 0.281 51.6 0.160 -98.9

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